gallium arsenide造句
造句與例句
手機版
- Test method for ga as ratio of surface of gallium arsenide
砷化鎵表面鎵砷比的測試方法 - Boat - grown gallium arsenide single crystals and as - cut slices
水平法砷化鎵單晶及切割片 - Test method for thermal stability testing of gallium arsenide wafers
砷化鎵晶片熱穩(wěn)定性的試驗方法 - Gallium arsenide single crystal - determination of dislocation density
砷化鎵單晶位錯密度的測量方法 - Gallium arsenide injection laser
砷化鎵注入雷射 - Meaning you could take a simple aluminum gallium arsenide laser and -
也就是說，只要拿一個簡單的砷化鋁鎵激光器和 - Aluminium gallium arsenide , algaas
砷化鎵鋁 - Meaning you could take a simple aluminum gallium arsenide laser and - -
也就是說，只要拿一個簡單的砷化鋁鎵激光器和. . - Measuring thickness of epitaxial layers of gallium arsenide by infrared interference
砷化鎵外延層厚度紅外干涉測量方法 - Liquid encapaulated czochralski - grouwn gallium arsenide single crystals and as - cut slices
液封直拉法砷化鎵單晶及切割片 - It's difficult to see gallium arsenide in a sentence. 用gallium arsenide造句挺難的
- Test method for microzone homogeneity of semi - insulating monocrystal gallium arsenide
半絕緣砷化鎵單晶微區(qū)均勻性測試方法 - Gallium arsenide photphide
磷砷化鎵 - Determination of carrier concentration in gallium arsenide by the plasma resonance minimum
砷化鎵中載流子濃度等離子共振測量方法 - Quantitative determination of ab microscopic defect density in gallium arsenide single crystal
砷化鎵單晶ab微缺險密度定量檢驗方法 - Test method for residual impurities concentration in microzone of semi - insulating gallium arsenide
半絕緣砷化鎵剩余雜質(zhì)濃度微區(qū)試驗方法 - Gallium arsenide epitaxial layer - determination of carrier concentration - voltage - capacitance method
砷化鎵外延層載流子濃度電容-電壓測量方法 - Test method for sub - surface damege of gallium arsenide polished wafer by x - ray double crystal diffraction
砷化鎵拋光片亞損傷層的x射線雙晶衍射試驗方法 - Test method for crystallographic perfection of gallium arsenide by molten potassium hydroxide etch technique
用熔融氫氧化鉀腐蝕技術(shù)測試砷化鎵結(jié)晶完整性的試驗方法 - Test method for carbon concentration of semi - insulating monocrystal gallium arsenide by measurement infrared absorption method
半絕緣砷化鎵單晶中碳濃度的紅外吸收測試方法 - Test method for wavelength of peak photoluminescence and the corresponding composition of gallium arsenide phosphide wafers
磷化砷化鎵片的最大光致發(fā)光波長及其相應成分的試驗方法
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